Memory cell for use in non-volatile static random access memory circuit, comprises static random access memory storage cell for storage of information bits and non-volatile storage area

摘要

The memory cell (1) comprises a static random access memory (SRAM) storage cell (2) for storage of information bits and a non-volatile storage area. Two transistors (9,10) are arranged between the SRAM storage cell and a bit line (7), where a third transistor and a fourth transistor (11,12) is arranged between the SRAM storage cell and another bit line (8). The SRAM storage cell is executed as a flip-flop storage cell.