7-Transistor 2-Memristor Based Non-volatile Static Random Access Memory Cell Design

摘要

Emerging chip technologies employ power-off mode to reduce the power dissipation of chips. Non-volatile SRAM (nvSRAM) enables a chip to store the data after power-off mode. This non-volatility can be achieved through memristor memory technology which is a promising emerging technology with unique properties such as high density, low-power and good-scalability. This paper provides a detailed study of memristor and proposes a memristor based 7T2M nvSRAM cell. This cell incorporates two memristors, which store the bit information present in the 6T SRAM cell, and a 1T switch, which helps to restore the previously written bit in situations of power supply failures, thereby making the SRAM non-volatile.