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Circuit has static random access memory storage element with storage cell and cross coupled inverter based on multi-gate-field effect transistors
Circuit has static random access memory storage element with storage cell and cross coupled inverter based on multi-gate-field effect transistors
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机译:电路具有带存储单元的静态随机存取存储器存储元件和基于多栅场效应晶体管的交叉耦合反相器
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摘要
The circuit has a static random access memory (SRAM) storage element with a storage cell and a cross coupled inverter based on multi-gate-field effect transistors. A group of input-components (110,112) are coupled with the storage element to provided a conntactability and another group of input-components (140,142) are coupled with the storage element to provide a another conntactability. Independent claims are also included for the following: (1) a circuit arrangement (2) a method for accessing a multi gate field-effect transistors based on memory cell (3) a method for accessing a multi gate field-effect transistors.
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