DLTS and Dynamic Transconductance Analysis of Deep-Submicron Fully-Depleted SOIMOSFETs

摘要

An experimental study of the degradation mechanisms of hot-carrier stressed SOI(SIMOX) MOSFET's is carried out. Depending on the applied stress conditions, it is found that device degradation is mainly caused by electron and hole trapping by intrinsic and generated oxide traps and/or by generation of interface states. Sequential hot-electron stressing of the front/back channels results in successive electron/hole injection in the gate oxides, leading to important insights on the nature of the degradation mechanisms.