Strained-Layer InGaAsP Diode Lasers with Tapered Gain Region for Operation atwavelength = 1.3 um

摘要

A report is given of the first high power InP based tapered lasers. Continuousoutput powers of 0.5 W with nearly 80% of the power in the central lobe have been obtained. This is the highest reported brightness of a 1.3 micron source.