首页> 外文学位 >Carrier dynamics and gain in 1.3-micron indium gallium arsenic nitride/gallium arsenic phosphide/gallium arsenide laser diodes.
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Carrier dynamics and gain in 1.3-micron indium gallium arsenic nitride/gallium arsenic phosphide/gallium arsenide laser diodes.

机译:1.3微米氮化铟镓砷化镓/磷化砷化镓/砷化镓激光二极管的载流子动力学和增益。

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摘要

This dissertation investigates the impact of nitrogen incorporation on the intrinsic processes that affects the threshold current and frequency response of 1.3mum InGaAsN/GaAsP/GaAs single quantum well (SQW) lasers. This study is accomplished through the analysis of the below threshold carrier lifetime and material gain and the frequency response above threshold in two identical laser structures that only differ in the incorporation of nitrogen. The above and below threshold frequency responses results are analyzed with a complete rate equation model of the laser diode that contains intrinsic material processes as well as external parasitics associated with the diode device.; The below threshold analysis coupled with the gain results provide the framework to understand the behavior of the threshold current in the 10-80°C temperature range in the nitrogen-containing structures in relation to that of the nitrogen free counterparts. This study was instrumental to find a three times increase in the monomolecular recombination and C w parameter, and a ∼30% decrease in the effective threshold differential gain in dilute nitride materials due to nitrogen incorporation. It was found that their combined effects could account for the majority of the increase in the threshold current and the decrease in the effective temperature To in dilute nitride lasers.; The study above threshold was motivated by the need to understand the potential of the dilute nitride laser for direct high speed modulation. In these studies the frequency response of the laser diode is obtained using selective femtosecond optical injection. As an innovation to the setup, we implemented this technique with pulse bias in order to prevent device damage and to reach 80°C in the active area. We show that single quantum well InGaAsN lasers reach -3dB bandwidths of 8.5GHz at 10°C, and their bandwidth reduces by 40% at 80°C. We analyze the modulation responses to extract the resonance frequency and damping. We utilize the rate equation model that incorporates carrier transport and electrical parasitics to show for the first time that the damping is affected by parasitics even under optical modulation. Further, the model permits to study the threshold effective differential gain of the devices. Within the uncertainties of the analysis, it is found that the effective differential gain shows a decrease with nitrogen incorporation similar to that observed from the analysis below threshold and furthermore, an identical temperature behavior. The results of this work are exploited to provide guidelines into the design of optimized laser structures with temperature insensitive threshold currents and bandwidths exceeding 10GHz, outperforming the existing 1.3mum InP-based technology.
机译:本文研究了氮掺入对影响1.3μmInGaAsN / GaAsP / GaAs单量子阱(SQW)激光器的阈值电流和频率响应的内在过程的影响。这项研究是通过分析两个相同激光结构(仅在氮的掺入方面有所不同)的低于阈值的载流子寿命和材料增益以及高于阈值的频率响应来完成的。利用包含二极管的固有材料过程以及与二极管器件相关的外部寄生效应的激光二极管的完整速率方程模型来分析阈值频率上下的响应结果。低于阈值的分析与增益结果相结合,为了解含氮结构中的阈值电流在10-80°C的温度范围内与无氮对应物之间的行为提供了框架。这项研究有助于发现单分子重组和C w参数增加了三倍,并且由于掺氮,稀氮化物材料的有效阈值微分增益降低了约30%。已经发现,它们的综合作用可以解释稀释氮化物激光器中阈值电流增加和有效温度To降低的大部分。超出阈值的研究的动机是需要了解稀氮化物激光器直接进行高速调制的潜力。在这些研究中,激光二极管的频率响应是使用选择性飞秒光学注入获得的。作为设置的一项创新,我们在脉冲偏置下实施了该技术,以防止器件损坏并在有效区域达到80°C。我们显示,单量子阱InGaAsN激光器在10°C时达到8.5GHz的-3dB带宽,而在80°C时其带宽减小了40%。我们分析调制响应以提取共振频率和阻尼。我们利用结合了载流子传输和电寄生效应的速率方程模型,首次显示了即使在光学调制下,阻尼也会受到寄生效应的影响。此外,该模型允许研究器件的阈值有效差分增益。在分析的不确定性范围内,发现有效的微分增益随氮掺入量的减少而降低,这与从低于阈值的分析中观察到的相似,并且具有相同的温度行为。这项工作的结果可为温度不敏感的阈值电流和带宽超过10GHz的优化激光器结构的设计提供指导,优于现有的基于1.3mum InP的技术。

著录项

  • 作者

    Anton, Ovidio.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Engineering Electronics and Electrical.; Physics Optics.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 218 p.
  • 总页数 218
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;光学;
  • 关键词

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