NEW STRUCTURE AND METHOD FOR FABRICATING INDIUM PHOSPHIDE/INDIUM GALLIUM ARSENIDE PHOSPHIDE BURIED HETEROSTRUCTURE SEMICONDUCTOR LASERS

摘要

It is the different crystal structure using InGaAsP InGaAsP active layers that semiconductor laser modulation bandwidth with higher, which does cap layers,. Channel is anisotropically etched across cap, covering and active layer and partially by buffer layer. Activity and cap layers lateral etches and semi insulating material layer cover side wall. Further etch the material active layer of the semi-insulating surrounding of the thin-walled left. 1.3 &mgr; 3 dB bandwidth intrinsic resonance frequency of m and InGaAsP lasers is more than that 24 GHz and 22 GHz have been successfully fabricated. The semiconductor laser that the highest bandwidth was once reported, with resonant frequency InGaAsP lasers when ceiling capacity. Excellent modulation efficiency is observed high frequency.