Semiconductor optical device e.g. laser comprises substrate which has an indium phosphide base and an active layer containing specified concentrations of gallium, indium, arsenic and nitrogen

摘要

A semiconductor optical device (100) comprises: (a) a substrate (1) with a base of indium phosphide; (b) an active layer (32) having a composition adjusted for an operating wavelength greater than 1.5 mu m which contains a concentration x of gallium, a concentration 1-x of indium and a concentration y of arsenic, where x is greater than or equal to 0.48; (c) the composition also includes a concentration z of nitrogen of less than or equal to 0.05 and the concentration y is essentially equal to 1-z.