Sublimation Growth of AlN Single Crystal on AlN Coated SiC Substrate. Phase 1

摘要

The technical work of this program resulted in the conclusion that SiC reactedstrongly with AlN at high temperature and single crystal AlN was not obtained using AlN coated SiC as seed material. Nevertheless, the undertaking of this program has led to the design and construction of a growth system especially growth crucible and its thermal shielding which eliminates system contamination and corrosion. By using this growth system controllable AlN sublimation-condensation experiments were carried out. Polycrystal AlN discs 20 mm in diameter and up to 4mm thick and single crystal grains and needles 13 mm in size were obtained. jg p.1.