METHOD FOR PRODUCING A SINGLE-CRYSTAL FILM OF ALN MATERIAL AND SUBSTRATE FOR THE EPITAXIAL GROWTH OF A SINGLE-CRYSTAL FILM OF ALN MATERIAL

摘要

The invention relates to a method for producing a single-crystal film of AlN material, comprising the transfer of a single-crystal seed layer of SiC-6H onto a support substrate of silicon material, followed by the epitaxial growth of the single-crystal film of AlN material.