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A method for the production of a long bulk single crystal of sic or aln and a long volume single crystal of sic or aln

机译:生产sic或aln的长块单晶和sic或aln的长体积单晶的方法

摘要

A process for the preparation of a bulk single crystal (2) made of sic or aln, whereina) in a crystal growth area (5) of a growth vessel (3; 23) a seed crystal (8; 18) with a start of growth surface and a central longitudinal center axis (14) is arranged, wherein a nucleus by knives of the seed crystal (8; 18) by at most 10% smaller than a single crystal is formed by knives of the bulk single crystal (2) is,b) in the crystal growth area (5) a growth gas phase (9) is generated and the volume of single crystal (2) by means of deposition from the growth gas phase (9) wake up,c) the growth gas phase (9) is at least partially made of a pulverulent expanding material (6) made of sic or aln, which is in a storage region (4) of the growth vessel (3; 23) is located, is fed,characterized in thatd) in front of the culture is the beginning of a virtually gas-tight volume between the block (7; 19; 26) of sic or aln in the growth crucible (3; 23) is used,e) known as swelling material components of the swelling section by means of the material (6) between the storage area (4) and the crystal growth area (5) and arranged..
机译:一种由sic或aln制成的块状单晶(2)的制备方法,其中a)在生长容器(3; 23)的晶体生长区域(5)内,以(a)为起点的籽晶(8; 18)。布置有生长表面和中心纵向中心轴(14),其中,由块状单晶(2)的刀形成的籽晶(8; 18)的刀的核比单晶小至多10%。是,b)在晶体生长区域(5)中产生生长气相(9),并且通过从生长气相(9)沉积而沉积的单晶(2)的体积被唤醒,c)生长气体阶段(9)至少部分地由sic或aln制成的粉状膨胀材料(6)制成,该粉状膨胀材料位于生长容器(3; 23)的储存区域(4)中,并进料,表征)在培养之前是使用生长坩埚(3; 23)中的sic或aln块(7; 19; 26)之间的几乎气密体积的开始,e)被称为溶胀材料成分Ť通过在存储区域(4)和晶体生长区域(5)之间的材料(6)膨胀段并进行布置。

著录项

  • 公开/公告号DE102009016132B4

    专利类型

  • 公开/公告日2012-12-27

    原文格式PDF

  • 申请/专利权人 SICRYSTAL AG;

    申请/专利号DE20091016132

  • 发明设计人 MARTIN KÖLBL;THOMAS DR. STRAUBINGER;

    申请日2009-04-03

  • 分类号C30B23/02;C30B29/36;C30B29/38;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:36

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