Thermoelastic stresses in SiC single crystals grown by the physical vapor transport method

摘要

A finite element-based thermoelastic anisotropic stress model for hexagonal silicon carbide polytype is developed for the calculation of thermal stresses in SiC crystals grown by the physical vapor transport method.The composite structure of the growing SiC crystal and graphite lid is considered in the model.The thermal expansion match between the crucible lid and SiC crystal is studied for the first time.The influence of thermal stress on the dislocation density and crystal quality iS discussed.