Development of Fundamentals of Droplet Epitaxy for the Formation of Quantum Dot Arrays in the InAs/GaAs System under MOVPE Conditions

摘要

The initial stage of the formation of quantum dots in the InAs/GaAs system by droplet epitaxy is investigated. The results of the study of the effect that the modes of MOVPE have on the size and density of the array of nanodimensional indium droplets on a GaAs(100) substrate are presented. The possibility to use indium evaporation to control the sizes of the deposited droplets is shown. A reasonable temperature range for heat treatment (300-400℃) is chosen on the basis of the calculations of the indium evaporation rate and the temperature dependence of the droplet-substrate contact wetting angle. From the calculation of heterogeneous equilibria in the In-Ga-As system, it was established that the change in the composition of the deposited droplets resulting from the possible substrate dissolution is extremely little in the specified temperature range.