Effect of MOVPE growth conditions on the formation of self-organized InAs/InGaAsP/InP quantum dots

摘要

Structural characteristics of uncapped InAs/InGaAsP dots were evaluated based on a simple approach using image processing of atomic-force micrographs. Height, mean area, ensemble density, and shape of the dots were determined. On this basis a systematic study of the effect of growth temperature and growth interruption as the main parameters that influence the formation of the dots was performed. With a PL analysis of buried QDs deposited in the same run with the same growth conditions a correlation between optical and structural characteristics was developed. On this basis comparison of modelled transition energies with experimental data was made possible.