InAs Self-Organized Quantum Dots Grown by MOVPE in In0.53Ga0.7As Matrix.

摘要

The results of the self-assembling Stranski-Krastanow growth of InAs quantum dots embedded in In(0.53)Ga(0.47)As by low pressure MOVPE are presented. The structures were investigated by room and liquid nitrogen photoluminescence methods. The highest obtained emission wavelength of 2.1 micrometers at room temperature is the longest value for InAs quantum dots reported in literature until now.