Effects of Oxide Thickness and Gate Length on DC Performance of Submicrometer MgO/GaN MOSFETs

摘要

The effects of MgO gate dielectric thickness and of gate length of MgO/GaN metal-oxide semiconductor field-effect transistors (MOSFETs) were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10~(-3) A mum~(-1) for 0.5 mum gate length devices with oxide thickness > 600 A or for all 1 mum gate length MOSFETs with oxide thickness in the range of > 200 A. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.