High-Performance 1- GaN n-MOSFET With MgO/MgO– Stacked Gate Dielectrics

摘要

Gate length of 1-$muhbox{m}$ enhancement-mode n-channel GaN MOSFET with MgO and hybrid MgO–$hbox{TiO}_{2}$ stacked gate dielectrics were characterized. The leakage current of a stacked MgO and hybrid MgO– $hbox{TiO}_{2}$ MOS capacitor can be as low as $hbox{6.2} times hbox{10}^{-9}$ and $hbox{6.9} times hbox{10}^{-9} hbox{A/cm}^{2}$ at $pm$1-V bias, respectively. Through a self-aligned process, superior $I_{D}$–$V_{D}$ and $I_{D}$– $V_{G}$ electrical characteristics of a MOSFET were obtained. The maximum drain current is $hbox{3.69} times hbox{10}^{-5} hbox{A}/muhbox{m}$ at a gate voltage $V_{g}$ of 8 V and a drain voltage $V_{D}$ of 10 V. The subthreshold swing is 342 mV/dec, and the $I_{scriptstyle{rm ON}}/I_{scriptstyle{rm OFF}}$ is $hbox{5.7} times hbox{10}^{4}$.