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机译:1-MeV电子照射对GAAAS单量子阱结构光致发光的影响
Chinese Acad Sci Key Lab Funct Mat &
Device Special Environm Xinjiang Tech Inst Phys &
Chem Urumqi 830011 Peoples R China;
Chinese Acad Sci Key Lab Funct Mat &
Device Special Environm Xinjiang Tech Inst Phys &
Chem Urumqi 830011 Peoples R China;
Chinese Acad Sci Key Lab Funct Mat &
Device Special Environm Xinjiang Tech Inst Phys &
Chem Urumqi 830011 Peoples R China;
Chinese Acad Sci Key Lab Funct Mat &
Device Special Environm Xinjiang Tech Inst Phys &
Chem Urumqi 830011 Peoples R China;
Chinese Acad Sci Key Lab Funct Mat &
Device Special Environm Xinjiang Tech Inst Phys &
Chem Urumqi 830011 Peoples R China;
Yunnan Normal Univ Sch Energy &
Environm Kunming 650500 Yunnan Peoples R China;
Yunnan Normal Univ Sch Energy &
Environm Kunming 650500 Yunnan Peoples R China;
Yunnan Normal Univ Sch Energy &
Environm Kunming 650500 Yunnan Peoples R China;
Yunnan Normal Univ Sch Energy &
Environm Kunming 650500 Yunnan Peoples R China;
Chinese Acad Sci Key Lab Funct Mat &
Device Special Environm Xinjiang Tech Inst Phys &
Chem Urumqi 830011 Peoples R China;
dilute nitride; quantum well; electron irradiation; PL; defect;
机译:1-MeV电子照射对GAAAS单量子阱结构光致发光的影响
机译:高剂量电子辐射对分子束外延生长的GaInNAs / GaAs量子阱的光致发光的影响
机译:高剂量电子辐射对分子束外延生长的GaInNAs / GaAs量子阱的光致发光的影响
机译:电子辐照对增益/ GaAs量子阱光致发光的影响
机译:基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译:(InGa)As / GaAs量子点链结构的光致发光中的协同效应
机译:通过分别产生电子和空穴来增强单个InAs / GaAs量子点的光致发光强度