INFLUENCE OF ELECTRON IRRADIATION AND POSTANNEALING ON PHOTOLUMINESCENCE OF GaInNAs/GaAs Quantum Wells

摘要

We investigated the effects of 7-MeV electron irradiation (2×10{sup}13 and 2×10{sup}13 cm{sup}(-2) doses) and postannealing on photoluminescence (PL) from 1.3-μm GaInNAs/GaAs multiple quantum wells (QWs) grown by molecular-beam epitaxy. A small enhancement (27%) in PL intensity is found for the lower dose whereas a noticeable deterioration in PL intensity is seen for the higher dose. When annealed at 650°Cfor 1 min the sample irradiated to the dose of 2×10{sup}13 cm{sup}(-2) underwent a similar enhancement and blue-shift in PL as the non-irradiated sample. In contrast, a much strong PL is observed for the sample irradiated to the dose of 2×10{sup}16 cm{sup}(-2) as compared to the non-irradiated sample. This irradiation-promoted enhancement in PL is accompanied by a small additional blue-shift as well as by small changes in x-ray diffraction rocking curves, which indicate small changes in quantum-well alloy composition or structure.