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Characterization of Undoped Pseudomorphic InGaAs/GaAs Quantum Wells by ElectronBeam Electroreflectance (EBER) and Photoluminescence

机译：用电子束电反射（EBER）和光致发光表征未掺杂的假晶InGaas / Gaas量子阱

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作者
Herman, M. H.; Dodabalapur, A.; Ward, I. D.; Streetman, B. G.;
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年度 1990
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总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Heterojunctions; Gallium arsenides; Photoluminescence; Reprints;

机译：异质结;砷化镓;光致发光;重印;

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专利

1. Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles [J] . D Y Lin, Y S Huang, K K Tiong Semiconductor Science and Technology . 1999,第1期

机译：具有变化的量子阱组成轮廓的AlGaAs / InGaAs / GaAs拟态高电子迁移率晶体管结构的室温光透射率和光致发光特性
2. Probing the indium clustering in InGaAs/GaAs quantum wells by room temperature contactless electroreflectance and photoluminescence spectroscopy [J] . M. Motyka, G. Sek, R. Kudrawiec, Journal of Applied Physics . 2007,第11期

机译：通过室温非接触电反射和光致发光光谱研究InGaAs / GaAs量子阱中的铟簇
3. Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells [J] . Naik KG, Rao KSRK, Srinivasan T, Physica, B. Condensed Matter . 2004,第3a4期

机译：在未掺杂的InGaAs / GaAs量子阱中自然存在的量子点上的双激子发光的光致发光研究
4. Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes [C] . Moneger, S., Pollak, . 1994

机译：放置在GaAs / GaAlAs谐振腔中的三个InGaAs量子阱的电反射特性：非接触和接触模式
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light [O] . Laipan Zhu, Yu Liu, Wei Huang, 2016

机译：通过圆偏振光激发的自旋光电流研究无掺杂InGaAs / AlGaAs多量子阱中的自旋输运
7. Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy [O] . Pan, Wenwu, Zhu, Liang, Zhang, Liyao, 2016

机译：生长InGaas / GaasBi / InGaas II型量子阱的光致发光气源分子束外延
8. Photoluminescence and Electroreflectance Studies of Modulation-Doped Pseudomorphic AlGaAs/InGaAs/GaAs Quantum Wells. [R] . Dodabalapur, A., Kesan, V. P., Neikirk, D. P., 1990

机译：调制掺杂的假晶alGaas / InGaas / Gaas量子阱的光致发光和电反射研究。

Characterization of Undoped Pseudomorphic InGaAs/GaAs Quantum Wells by ElectronBeam Electroreflectance (EBER) and Photoluminescence

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