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机译:高剂量电子辐射对分子束外延生长的GaInNAs / GaAs量子阱的光致发光的影响
Natl Inst Res & Dev Microtechnol Erou Iancu Nicolae 126A Bucharest 077190 Romania|Hyperion Univ Fac Exact Sci & Engn Calea Calarasilor 169 Bucharest 030615 Romania;
Hyperion Univ Fac Exact Sci & Engn Calea Calarasilor 169 Bucharest 030615 Romania;
Tampere Univ Technol Dept Phys FIN-33101 Tampere Finland|Tampere Univ Technol Optoelect Res Ctr FIN-33101 Tampere Finland;
Electron irradiation; Photoluminescence; Dilute nitrides;
机译:高剂量电子辐射对分子束外延生长的GaInNAs / GaAs量子阱的光致发光的影响
机译:等离子体辅助分子束外延生长的退火GaInNAs / GaAs量子阱激光结构的光致发光激发效应
机译:固体源分子束外延生长的GaInNAs / GaAs量子阱的温度异常的光致发光特性
机译:分子束外延生长的应变补偿GaInNAs / GaAs / GaAs量子阱结构的光致发光研究
机译:通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光(MU-PL)研究
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:分子束外延生长GaInNAs和GaInNAs(Sb)量子阱的光电流和光致发光研究