Photoluminescence study of strain-compensated GaInNAs/GaAs/GaAs quantum-well structures grown by molecular-beam epitaxy

摘要

We report on photoluminescence properties of as-grown and rapid thermally annealed 1.3-/spl mu/m GaInNAs/GaNAs/GaAs quantum-well structures, grown by solid-source molecular-beam epitaxy. Insertion of strain-compensating GaNAs layers in between the GaInNAs well and the GaAs barriers of a GaInNAs/GaAs quantum well shifts the emission towards longer wavelengths, at the expense of line broadening. Luminescence performances of the GaNAs strain-compensated quantum wells were found to be controlled by nitrogen concentration and GaNAs layers width. The presence of the GaNAs barriers sustained a bigger annealing-induced blue shift of the QW photoluminescence spectrum than that met in samples without GaNAs barrier layers.