Light emitting semiconductor device with GaInNAs active layer and GaAs spacer layers

摘要

A light emitting semiconductor device, comprising:;a lower cladding layer of Al_zGa_1-zAs (0z≦1) alloy semiconductor layers, having a first conductivity type;;a lower light guide layer of Al_zGa_1-zAs (0z≦1) alloy semiconductor layers, having a band gap narrower than that of the lower cladding layer;;a lower spacing layer, comprising at least one molecular layer of GaAs;;a Ga_xIn_1-xN_yAs_1-y (0≦x≦1 and 0y1) active layer, having a thickness less than the critical thickness so as not to give rise to misfit dislocations and having a band gap narrower than that of the lower light guide layer;;an upper spacing layer, comprising at least one molecular layer of GaAs;;an upper light guide layer of Al_zGa_1-zAs (0z≦1) alloy semiconductor layers, having a band gap narrower than that of the active layer and narrower than that of the lower cladding layer; and;an upper cladding layer of Al_zGa_1-zAs (0z≦1) alloy semiconductor layers, having a second conductivity type,;each grown on a semiconductor substrate in the order above recited.