PHOTO DEVICE EPILAYER STRUCTURE OF LATTICE-MATCHED INGAAS/INGAASP MULTIPLE-QUANTUM-WELL STRUCTURE BY HIGH-ENERGY ION IMPLANTATION AND METHOD FOR FABRICATING THE SAME

摘要

A photo device epitaxial layer of a lattice-matched InGaAs/InGaAsP multiple-quantum-well structure and a method of manufacturing the same are provided to maximize the wavelength shift of band gap by optimizing a quantum well intermixing process. An n-InP lower cladding layer is formed on a substrate. An active layer is formed on the n-InP lower cladding layer. The active layer is composed of InGaAs well layers and InGaAsP barrier layers alternately stacked each other. A p-InP upper cladding layer and an InGaAs electrode layer are sequentially formed on the resultant structure. An InP protection layer is formed on the InGaAs electrode layer to prevent the contamination of an upper surface of the InGaAs electrode layer and the generation of vacancy due to the deviation of Ga from the InGaAs electrode layer.