Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

Othman Nurul Aida Farhana; Rahman Sharidya; Hatta Sharifah Fatmadiana Wan Muhamad; Soin Norhayati; Benbakhti Brahim; Duffy Steven

首页> 外文期刊>Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe >Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

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Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

机译：基于材料和物理尺寸的梯度Algan / GaN HEMT器件性能设计优化

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Purpose To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys' Sentaurus TCAD tool.

机译：目的设计和优化传统铝镓/氮化镓高电子迁移率晶体管（HEMT）装置，实现了使用Synopsys'Sentaurus TCAD工具改进的性能和电流处理能力。

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来源
《Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe》 |2019年第2期|共10页
作者
Othman Nurul Aida Farhana; Rahman Sharidya; Hatta Sharifah Fatmadiana Wan Muhamad; Soin Norhayati; Benbakhti Brahim; Duffy Steven;
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作者单位

Univ Malaya Dept Elect Engn Fac Engn Kuala Lumpur Malaysia;

Univ Malaya Dept Elect Engn Fac Engn Kuala Lumpur Malaysia;

Univ Malaya Fac Engn Kuala Lumpur Malaysia;

Univ Malaya Fac Engn Kuala Lumpur Malaysia;

Liverpool John Moores Univ Sch Engn Liverpool Merseyside England;

Liverpool John Moores Univ Sch Engn Liverpool Merseyside England;

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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
Dielectrophoretic; Dielectrophoretic forces; Microelectrode array; Polystyrene microbeads capture;

机译：介电泳;介电流力;微电极阵列;聚苯乙烯微珠捕获;

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1. Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions [J] . Othman Nurul Aida Farhana, Rahman Sharidya, Hatta Sharifah Fatmadiana Wan Muhamad, Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe . 2019,第2期

机译：基于材料和物理尺寸的梯度Algan / GaN HEMT器件性能设计优化
2. Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations [J] . Nandha Kumar Subramani, Julien Couvidat, Ahmad Al Hajjar, Electron Devices Society, IEE . 2017,第3期

机译：通过低频S参数测量和基于TCAD的物理设备仿真识别微波功率AlGaN / GaN HEMT中的GaN缓冲阱
3. Optimization of Graded AlInN/AlN/GaN HEMT Device Performance Based on Quaternary Back Barrier for High Power Application [J] . Rahman Sharidya, Othman Nurul Aida Farhana, Hatta Sharifah Wan Muhamad, ECS Journal of Solid State Science and Technology . 2017,第12期

机译：基于第四级背屏对高功率应用的分级alinn / ALN / GAN HEMT器件性能的优化
4. High-Performance AlGaN-GaN HEMT Materials and Devices Grown and Fabricated on Si Substrates [C] . Z. H. Feng, J. Y. Yin, F. P. Yuan, International Conference on Thin Film Physics and Applications . 2008

机译：高性能Alga-GaH HEMT材料和器件在SI基板上生长和制造
5. Strain effects in low-dimensional silicon MOS and AlGaN/GaN HEMT devices. [D] . Baykan, Mehmet Onur. 2012

机译：低维硅MOS和AlGaN / GaN HEMT器件中的应变效应。
6. Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation [O] . Van Cuong Nguyen, Kwangeun Kim, Hyungtak Kim 2021

机译：基于PD-Algan / GaN HEMTS栅极偏压调制的二氧化氮气体传感器性能优化
7. Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions [O] . Nurul Aida Farhana Othman, Sharidya Rahman, Sharifah Fatmadiana Wan Muhamad Hatta, 2019

机译：基于材料和物理尺寸的梯度Algan / GaN HEMT器件性能设计优化

Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

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