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Electron Devices Society, IEE

中文名称：电子设备学会

ISSN：2168-6734
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1.Design Rules for High Performance Tunnel Transistors From 2-D Materials

机译：二维材料的高性能隧道晶体管的设计规则
- 作者：Hesameddin Ilatikhameneh;Gerhard Klimeck;Joerg Appenzeller;Rajib Rahman
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第5期
- TFETs;
- Logic gates;
- Strain;
- Doping;
- Performance evaluation;
- Photonic band gap;
- Junctions;
2.Implementation of TFET SPICE Model for Ultra-Low Power Circuit Analysis

机译：TFET SPICE模型用于超低功耗电路分析的实现
- 作者：Chika Tanaka;Kanna Adachi;Motohiko Fujimatsu;Akira Hokazono;Yoshiyuki Kondo;Shigeru Kawanaka
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第5期
- TFETs;
- Integrated circuit modeling;
- Semiconductor device modeling;
- Tunneling;
- Logic gates;
- MOSFET;
- Leakage currents;
3.Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review

机译：Si以外的应用的Ge GAA FET和TMD FinFETs评述
- 作者：Yao-Jen Lee;Guang-Li Luo;Fu-Ju Hou;Min-Cheng Chen;Chih-Chao Yang;Chang-Hong Shen;Wen-Fa Wu;Jia-Min Shieh;Wen-Kuan Yeh
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第5期
- Logic gates;
- Etching;
- Gallium arsenide;
- FinFETs;
- Silicon;
- Epitaxial growth;
4.Direct Evaluation of Self-Heating Effects in Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

机译：使用四端子栅极电阻技术直接评估块状和超薄BOX SOI MOSFET中的自热效应
- 作者：Tsunaki Takahashi;Takeo Matsuki;Takahiro Shinada;Yasuo Inoue;Ken Uchida
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第5期
- Logic gates;
- MOSFET;
- Temperature measurement;
- Resistance;
- Silicon-on-insulator;
- Semiconductor device measurement;
- Current measurement;
5.Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al2O3/SiO2 Stacked Insulators

机译：沉积有原子层的Al2O3 / SiO2叠层绝缘子的非晶In-Ga-Zn-O TFT的迁移率和稳定性增强
- 作者：Li-Li Zheng;Shi-Bing Qian;You-Hang Wang;Wen-Jun Liu;Shi-Jin Ding
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第5期
- Aluminum oxide;
- Logic gates;
- Thin film transistors;
- Insulators;
- Stress;
- Dielectrics;
- Thermal stability;
6.Investigation of Post Oxidation Annealing Effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

机译：H2O2-生长-Al2O3 / AlGaN / GaN MOSHEMT的后氧化退火效应研究
- 作者：Han-Yin Liu;Wen-Chia Ou;Wei-Chou Hsu
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第5期
- Annealing;
- Logic gates;
- Aluminum oxide;
- Oxidation;
- Current density;
- Hysteresis;
- HEMTs;
7.Design Consideration of Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope

机译：具有超陡开关斜率的二极管型NAND闪存单元串的设计考虑
- 作者：Nag Yong Choi;Sung-Min Joe;Byung-Gook Park;Jong-Ho Lee
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第5期
- Field effect transistors;
- Flash memories;
- Logic gates;
- Performance evaluation;
- Silicon;
- Doping;
- Mathematical model;
8.The Film Thickness Effect on Electrical Conduction Mechanisms and Characteristics of the Ni–Cr Thin Film Resistor

机译：膜厚对Ni-Cr薄膜电阻的导电机理和特性的影响
- 作者：Nai-Chuan Chuang;Jyi-Tsong Lin;Ting-Chang Chang;Tsung-Ming Tsai;Kuan-Chang Chang;Chih-Wei Wu
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Thin films;
- Annealing;
- Scattering;
- Resistors;
- Conductivity;
- Sputtering;
- Nickel alloys;
9.Performance Investigation of Single Grain Boundary Junctionless Field Effect Transistor

机译：单晶无边界结型场效应晶体管的性能研究
- 作者：Mamidala Saketh Ram;Dawit Burusie Abdi
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Grain boundaries;
- Thin film transistors;
- Silicon;
- Performance evaluation;
- Electron traps;
- Field effect transistors;
10.Model of Organic Solar Cell Photocurrent Including the Effect of Charge Accumulation at Interfaces and Non-Uniform Carrier Generation

机译：包含界面电荷积累和不均匀载流子效应的有机太阳能电池光电流模型
- 作者：Lorenzo Torto;Andrea Cester;Antonio Rizzo;Nicola Wrachien;Suren A. Gevorgyan;Michael Corazza;Frederik C. Krebs
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Electric fields;
- Analytical models;
- Photovoltaic cells;
- Photoconductivity;
- Organic materials;
11.Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

机译：低有效质量III-V FinFET中的电荷和量子电容建模
- 作者：Mohit D. Ganeriwala;Chandan Yadav;Nihar R. Mohapatra;Sourabh Khandelwal;Chenming Hu;Yogesh Singh Chauhan
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Quantum capacitance;
- SPICE;
- Numerical models;
- Computational modeling;
- Semiconductor device modeling;
- III-V semiconductor materials;
- FinFETs;
12.Magnetically Tuned Varistor and Its Embedded Transistors

机译：磁调谐压敏电阻及其嵌入式晶体管
- 作者：Raghvendra K. Pandey;William A. Stapleton;Rainer Schad
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Saturation magnetization;
- Magnetic devices;
- Magnetic semiconductors;
- HEMTs;
- Varistors;
- Field effect transistors;
13.New 2-D/3-D Switchable Pixel Circuit to Achieve Uniform OLED Luminance for High-Speed AMOLED Displays

机译：新型2D / 3D可切换像素电路可实现高速AMOLED显示器的均匀OLED亮度
- 作者：Chih-Lung Lin;Po-Chun Lai;Po-Cheng Lai;Po-Syun Chen
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Thin film transistors;
- Threshold voltage;
- Degradation;
- Active matrix organic light emitting diodes;
14.Lithium-Intercalated Graphene Interconnects: Prospects for On-Chip Applications

机译：锂嵌入石墨烯互连：片上应用的前景
- 作者：Atul Kumar Nishad;Rohit Sharma
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Integrated circuit interconnections;
- Delays;
- Resistance;
- Capacitance;
- Graphene;
- Lithium;
- Copper;
15.Analysis of Temperature Dependent Effects on I–V Characteristics of Heterostructure Tunnel Field Effect Transistors

机译：温度对异质结构隧道场效应晶体管IV特性的影响分析
- 作者：Jie Min;Lingquan Dennis Wang;Jianzhi Wu;Peter M. Asbeck
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Temperature dependence;
- Tunneling;
- TFETs;
- Potential well;
- Threshold voltage;
- Photonic band gap;
16.P-Type Tunnel FETs With Triple Heterojunctions

机译：具有三异质结的P型隧道FET
- 作者：Jun Z. Huang;Pengyu Long;Michael Povolotskyi;Gerhard Klimeck;Mark J. W. Rodwell
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- TFETs;
- Effective mass;
- Scattering;
- Heterojunctions;
- Tunneling;
- Doping;
17.New Super-Junction LDMOS Based on Poly-Si Thin-Film Transistors

机译：基于多晶硅薄膜晶体管的新型超结LDMOS
- 作者：Jhen-Yu Tsai;Hsin-Hui Hu
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- MOSFET;
- Junctions;
- Thin film transistors;
- Silicon-on-insulator;
18.On the Small-Signal Capacitance of RF MEMS Switches at Very Low Frequencies

机译：在非常低的频率下RF MEMS开关的小信号电容
- 作者：Jiahui Wang;Jeroen Bielen;Cora Salm;Gijs Krijnen;Jurriaan Schmitz
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
19.Water-Soluble Glass Substrate as a Platform for Biodegradable Solid-State Devices

机译：水溶性玻璃基板作为可生物降解固态设备的平台
- 作者：Shihab Adnan;Kwang-Man Lee;Mohammad Tayeb Ghasr;Matthew J. O’Keefe;Delbert E. Day;Chang-Soo Kim
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Glass;
- Substrates;
- Biodegradation;
- Thin film devices;
- Biodegradable materials;
- Resonance;
- Impedance;
20.Energy-Saving Write/Read Operation of Memory Cell by Using Separated Storage Device and Remote Reading With an MIS Tunnel Diode Sensor

机译：通过使用独立的存储设备进行存储单元的节能写/读操作，并使用MIS隧道二极管传感器进行远程读取
- 作者：Chien-Shun Liao;Wei-Chih Kao;Jenn-Gwo Hwu
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Current measurement;
- Current-voltage characteristics;
- MIS devices;
- Voltage measurement;
- Electron devices;
21.Ultra-High Mobility in Dielectrically Pinned CVD Graphene

机译：介电固定CVD石墨烯的超高迁移率
- 作者：Ramy Nashed;Chenyun Pan;Kevin Brenner;Azad Naeemi
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Graphene devices;
- Dielectrics;
- Fabrication;
- Chemical vapor deposition;
- Charge carrier processes;
- Electron mobility;
22.Study of the Effect of Surface Roughness on the Performance of RF MEMS Capacitive Switches Through 3-D Geometric Modeling

机译：通过3D几何建模研究表面粗糙度对RF MEMS电容开关性能的影响
- 作者：Sarath Gopalakrishnan;Amitava Dasgupta;Deleep R. Nair
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Surface roughness;
- Capacitance;
- Radio frequency;
- Dielectrics;
- Microelectromechanical systems;
23.Photovoltaic Performance Analysis of Dye-Sensitized Solar Cell With ZnO Compact Layer and TiO2/Graphene Oxide Composite Photoanode

机译：具有ZnO致密层和TiO2 /氧化石墨烯复合光电阳极的染料敏化太阳能电池的光伏性能分析
- 作者：Jung-Chuan Chou;Yu-Jen Lin;Yi-Hung Liao;Chih-Hsien Lai;Chia-Ming Chu;Pei-Hong You;Yu-Hsun Nien
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Zinc oxide;
- II-VI semiconductor materials;
- Photovoltaic systems;
- Thin films;
- Titanium compounds;
24.Characterization of RF Noise in UTBB FD-SOI MOSFET

机译：UTBB FD-SOI MOSFET中RF噪声的表征
- 作者：Pragya Kushwaha;Avirup Dasgupta;Yogendra Sahu;Sourabh Khandelwal;Chenming Hu;Yogesh Singh Chauhan
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- Noise measurement;
- Thermal noise;
- Semiconductor device modeling;
- Silicon-on-insulator;
- MOSFET;
25.The Dual Effects of Gate Dielectric Constant in Tunnel FETs

机译：隧道FET中栅极介电常数的双重效应
- 作者：Hao Wang;Sheng Chang;Jin He;Qijun Huang;Feng Liu
- 期刊名称：《Electron Devices Society, IEE》 | 2016年第6期
- TFETs;
- Numerical simulation;
- Junctions;
- Dielectric constant;
- Tunneling;
- Dielectrics;
26.A Model for Multilevel Phase-Change Memories Incorporating Resistance Drift Effects

机译：考虑电阻漂移效应的多级相变存储器模型
- 作者：Cobley R.A.;Wright C.D.;Vazquez Diosdado J.A.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
27.An InGaAs/InP DHBT With Simultaneous $text{f}_{boldsymbol tau }/text{f}_{text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

机译：同时具有 $ text {f} _ {boldsymbol tau} / text {f} _ {text {max}}〜404/901 $的InGaAs / InP DHBT / tex-math> GHz和4.3 V击穿电压
- 作者：Rode J.C.;Chiang H.;Choudhary P.;Jain V.;Thibeault B.J.;Mitchell W.J.;Rodwell M.J.W.;Urteaga M.;Loubychev D.;Snyder A.;Wu Y.;Fastenau J.M.;Liu A.W.K.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
- Heterojunction bipolar transistors;
- IEEE Electron Devices Society;
- Indium gallium arsenide;
- Indium phosphide;
- Junctions;
- Silicon;
- HBT;
- InGaAs/InP DHBT;
- THz device;
28.A Perspective on Symmetric Lateral Bipolar Transistors on SOI as a Complementary Bipolar Logic Technology

机译：SOI上的对称横向双极晶体管作为互补双极逻辑技术的观点
- 作者：Ning T.H.;Cai J.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
29.Source/Drain Doping Effects and Performance Analysis of Ballistic III-V n-MOSFETs

机译：弹道III-V n-MOSFET的源极/漏极掺杂效应和性能分析
- 作者：Kim R.;Avci U.E.;Young I.A.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
- Doping;
- Gallium arsenide;
- Logic gates;
- MOSFET circuits;
- Scattering;
- Silicon;
- Tunneling;
- III-V semiconductor materials;
- MOSFET;
- nanoscale devices;
- nanowires;
- semiconductor device modeling;
30.Source-Pull and Load-Pull Characterization of Graphene FET

机译：石墨烯FET的源-拉和负载-拉特性
- 作者：Fregonese S.;de Matos M.;Mele D.;Maneux C.;Happy H.;Zimmer T.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
- Gain;
- Graphene;
- Impedance matching;
- Load modeling;
- Solid modeling;
- Transistors;
- Tuners;
- Circuit design;
- FET;
- Graphene;
- circuit design;
- impedance matching;
- load-pull;
- small-signal model;
- source-pull;
31.A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

机译：具有微波驱动技术的三相AC-AC矩阵转换器GaN芯片组
- 作者：Nagai S.;Yamada Y.;Negoro N.;Handa H.;Hiraiwa M.;Otsuka N.;Ueda D.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
32.Graphene Field-Effect Transistors for Radio-Frequency Flexible Electronics

机译：射频柔性电子的石墨烯场效应晶体管
- 作者：Petrone N.;Meric I.;Chari T.;Shepard K.L.;Hone J.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
- Graphene;
- Logic gates;
- Performance evaluation;
- Radio frequency;
- Strain;
- Substrates;
- Transistors;
- Chemical vapor deposition (CVD);
- FET;
- chemical vapor deposition (CVD);
- flexible electronics;
- grapheme;
- graphene;
- radio-frequency (RF);
33.A Warm Welcome to New Members of the J-EDS Editorial Board

机译：热烈欢迎J-EDS编辑委员会的新成员
- 作者：Abe D.K.;Bulucea C.;Ikeda S.;Ostling M.;Sangiorgi E.;Surya C.;Jindal R.P.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第1期
- Editorials;
- Educational institutions;
- Electrical engineering;
- IEEE Electron Devices Society;
- Laboratories;
- Materials;
- Physics;
34.A Silicon Biristor With Reduced Operating Voltage: Proposal and Analysis

机译：降低工作电压的硅双变阻器：建议和分析
- 作者：Kumar Mamidala Jagadesh;Maheedhar M.;Varma P.P.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第2期
35.Thermo-Magnetic Effects in Nano-Scaled MOSFET: An Experimental, Modeling, and Simulation Approach

机译：纳米级MOSFET中的热磁效应：一种实验，建模和仿真方法
- 作者：Rodriguez-Ruiz Gabriela /A/.;Gutierrez-D Edmundo /A/.;Sarmiento-Reyes L. Arturo;Stanojevic Zlatan;Kosina Hans;Guarin Fernando J.;Garcia-R Pedro J.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第2期
36.Patterned Membrane as Substrate and Electrolyte in Depletion- and Enhancement Mode Ion-Modulated Transistors

机译：耗尽型和增强型离子调制晶体管中作为衬底和电解质的图案化膜
- 作者：Pettersson Fredrik;Koskela Janne;Wikman Carl-Johan;Remonen Tommi;Wilen Carl-Eric;Kilpela Ari;Osterbacka Ronald
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第2期
37.A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor

机译：具有高转换增益的Quanta图像传感器泵门控制装置
- 作者：Jiaju Ma;Fossum Eric R.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第2期
38.A Study on the Diffuse Mechanism and the Barrier Property of Copper Manganese Alloy on Tantalum

机译：铜锰合金在钽上的扩散机理及阻挡性能研究
- 作者：Su Ying-Sen;Lee Wen-Hsi;Chang Shih-Chieh;Wang Ying-Lang
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Annealing;
- Atomic layer deposition;
- Films;
- Manganese;
- Silicon;
- Thermal stability;
- Barrier;
- CuMn alloy;
- Ta;
- annealing;
- barrier;
- self-formed;
39.Nature and Characteristics of a Voltage-Biased Varistor and its Embedded Transistor

机译：电压偏置压敏电阻及其嵌入式晶体管的性质和特性
- 作者：Pandey Raghvendra K.;Stapleton William /A/.;Sutanto Ivan
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Ceramics;
- IEEE Electron Devices Society;
- Magnetic semiconductors;
- Photonic band gap;
- Transistors;
- Varistors;
- Varistors;
- signal amplification;
- transconductance;
- transistors;
- varistors;
40.Fabrication and Characterization of Film Profile Engineered ZnO TFTs With Discrete Gates

机译：具有离散栅极的薄膜轮廓工程ZnO TFT的制备和表征
- 作者：Lyu Rong-Jhe;Lin Horng-Chih;Huang Tiao-Yuan
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Bridge circuits;
- Bridges;
- Fabrication;
- Films;
- Logic gates;
- Thin film transistors;
- Zinc oxide;
- Metal oxide;
- ZnO;
- film profile engineering (FPE);
- thin-film transistor;
41.III-V Heterostructure Nanowire Tunnel FETs

机译：III-V异质结构纳米线隧道FET
- 作者：Lind Erik;Memisevic Elvedin;Dey Anil W.;Wernersson Lars-Erik
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Logic gates;
- Nanoscale devices;
- Photonic band gap;
- Silicon;
- Substrates;
- Temperature measurement;
- Tunneling;
- GaSb;
- III-V;
- InAs;
- Tunnel field effect transistors (TFET);
- broken gap;
42.On Device Architectures, Subthreshold Swing, and Power Consumption of the Piezoelectric Field-Effect Transistor ( src='/images/tex/26692.gif' alt='{pi }'> -FET)

机译：关于器件架构，压电场效应晶体管的亚阈值摆幅和功耗（ src =“ / images / tex / 26692.gif” alt =“ {pi}”> -FET）
- 作者：Hueting Raymond J. E.;Van Hemert Tom;Kaleli Buket;Wolters Rob /A/. M.;Schmitz Jurriaan
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Field effect transistors;
- Logic gates;
- Metals;
- Performance evaluation;
- Silicon;
- Strain;
- CMOS;
- MOSFET;
- Piezoelectric effect;
- piezoelectric effect;
- steep-subthreshold device;
- subthermal device;
43.Sharp Switching by Field-Effect Bandgap Modulation in All-Graphene Side-Gate Transistors

机译：全石墨烯侧栅晶体管中的场效应带隙调制实现的快速开关
- 作者：Tung Lieh-Ting;Kan Edwin C.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Graphene;
- Lithography;
- Logic gates;
- Modulation;
- Photonic band gap;
- Temperature measurement;
- Transistors;
- Graphene;
- Graphene,;
- bandgap modulation;
- nanoribbon;
- power gating;
- thin-film transistors;
44.Transmission Engineering as a Route to Subthermal Switching

机译：传输工程学通往超热交换的道路
- 作者：Ghosh Avik W.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Equations;
- Graphene;
- Junctions;
- Logic gates;
- Mathematical model;
- Photonic band gap;
- Tunneling;
- Field effect transistors;
- nanoelectromechanical systems;
- nanoelectronics;
- nanoscale devices;
- tunneling;
45.Tunnel Field-Effect Transistors: Prospects and Challenges

机译：隧道场效应晶体管：前景与挑战
- 作者：Avci Uygar E.;Morris Daniel H.;Young Ian /A/.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Doping;
- Logic gates;
- MOSFET;
- Silicon;
- Tunneling;
- Steep-slope;
- TFET;
- Tunnel field-effect transistor (TFET);
- steep-slope;
46.Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

机译：GeSn-SiGeSn异质隧道FET的带偏工程及其应变的作用
- 作者：Sant Saurabh;Schenk Andreas
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Doping;
- Junctions;
- Logic gates;
- Materials;
- Photonic band gap;
- Strain;
- Tunneling;
- GeSn-SiGeSn hetero structures;
- Tunnel FETs;
- band offset optimization;
47.Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates

机译：在纳米管模板中使用选择性外延在硅上集成垂直InAs-Si栅极全能隧道FET
- 作者：Cutaia Davide;Moselund Kirsten E.;Borg Mattias;Schmid Heinz;Gignac Lynne;Breslin Chris M.;Karg Siegfried;Uccelli Emanuele;Riel Heike
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
48.Investigation and Simulation of Work-Function Variation for III–V Broken-Gap Heterojunction Tunnel FET

机译：III–V断间隙异质结隧道FET的功函数变化的研究和仿真
- 作者：Hsu Chih-Wei;Fan Ming-Long;HU Vita Pi-Ho;Su Pin
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
49.TFET-Based Circuit Design Using the Transconductance Generation Efficiency src='/images/tex/26694.gif' alt=' {g}_{m}/ {I}_{d}'> Method

机译：使用跨导产生效率的基于TFET的电路设计 src =“ / images / tex / 26694.gif” alt =“ {g} _ {m} / {I} _ {d}”> < / inline-formula>方法
- 作者：Barboni Leonardo;Siniscalchi Mariana;Sensale-Rodriguez Berardi
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
50.1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design

机译：基于不对称隧道FET设计的1T无电容DRAM单元
- 作者：Biswas Arnab;Ionescu Adrian M.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
51.Impact of Super-Linear Onset, Off-Region Due to Uni-Directional Conductance and Dominant src='/images/tex/26690.gif' alt='mathrm{C}_{text {GD}}'> on Performance of TFET-Based Circuits

机译：由于单向电导和支配性而引起的超线性起始，偏离区域的影响 src =“ / images / tex / 26690.gif” alt =“ mathrm {C} _ {text {GD} }“> 基于TFET的电路性能
- 作者：Dagtekin Nilay;Mihai Ionescu Adrian
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Capacitance;
- Delays;
- Energy consumption;
- Inverters;
- Logic gates;
- MOSFET;
- Tunneling;
- Crosstalk;
- Miller effect;
- Tunnel FET;
- super-linear onset;
- tunnel FET (TFET);
- uni-directional conduction;
52.CuIn_1−xAl_xSe₂ Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

机译：共溅射和改性硒化制备的CuIn _{1-x Al _{x Se _{2 薄膜：在柔性太阳能电池中的应用}}}
- 作者：Banavoth Murali;Madhuri M.;Krupanidhi S.B.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Annealing;
- Doping;
- Films;
- Lattices;
- Photovoltaic cells;
- Steel;
- Substrates;
- Inorganic materials;
- instruments;
- photovoltaic cells;
- sputtering;
- thin films;
53.Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis

机译：重结晶多晶硅上的单晶边界无掺杂PNPN隧道FET：建议和理论分析
- 作者：Ram Mamidala Saketh;Abdi Dawit Burusie
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
54.A Time-of-Flight Range Image Sensor With Background Canceling Lock-in Pixels Based on Lateral Electric Field Charge Modulation

机译：基于横向电场电荷调制的具有背景消除锁定像素的飞行时间范围图像传感器
- 作者：Han Sang-Man;Takasawa Taishi;Yasutomi Keita;Aoyama Satoshi;Kagawa Keiichiro;Kawahito Shoji
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
55.Foreword Special Issue on Transistors With Steep Subthreshold Swing for Low-Power Electronics

机译：低功率电子器件具有陡峭亚阈值摆幅的晶体管的前言特刊
- 作者：Esseni David;Ionescu Adrian M.;Seabaugh Alan;Yeo Yee-Chia
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Awards activities;
- Biological system modeling;
- IEEE Electron Devices Society;
- Integrated circuit modeling;
- MOSFET;
- Silicon;
56.Nonvolatile Electrochemical Metallization Memory Based on Nanocrystalline La₂O₃ Solid Electrolyte Thin Film

机译：基于纳米La _{2 O _{3 固体电解质薄膜的非易失性电化学金属存储}}
- 作者：Zhao Hongbin;Tu Hailing;Wei Feng;Xiong Yuhua;Du Jun
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
57.Exploiting Hetero-Junctions to Improve the Performance of III–V Nanowire Tunnel-FETs

机译：开发异质结以改善III–V纳米线隧道FET的性能
- 作者：Pala Marco G.;Brocard Sylvan
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
58.Projected Performance of Heterostructure Tunneling FETs in Low Power Microwave and mm-Wave Applications

机译：低功率微波和毫米波应用中异质结构隧穿FET的预期性能
- 作者：Asbeck Peter M.;Lee Kangmu;Min Jie
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
59.High Temperature Simulation of 4H-SiC Bipolar Circuits

机译：4H-SiC双极电路的高温仿真
- 作者：Elgabra Hazem;Singh Shakti
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Delays;
- Inverters;
- Logic gates;
- Noise;
- Silicon carbide;
- Temperature;
- Transistors;
- 4H-SiC;
- Bipolar Integrated Circuits;
- ECL;
- High Speed;
- High Temperature;
- Logic Family;
- STTL;
- TTL;
- bipolar integrated circuits;
- high speed;
- high temperature;
- logic family;
60.Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

机译：用于逻辑和模拟应用的应变Si和SiGe纳米线隧道FET
- 作者：Zhao Qing-Tai;Richter Simon;Schulte-Braucks Christian;Knoll Lars;Blaeser Sebastian;Luong Gia Vinh;Trellenkamp Stefan;Schafer Anna;Tiedemann Andreas;Hartmann Jean-Michel;Bourdelle Konstantin;Mantl Siegfried
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Annealing;
- Ion implantation;
- Junctions;
- Logic gates;
- Silicon;
- Silicon germanium;
- Tunneling;
- NAND;
- SiGe;
- Strained Si nanowire;
- Tunnel-FET;
- analog;
- inverter;
- strained Si Nanowire;
- subthreshold slope (SS);
- tunnel-FET;
61.Sub-kT Switching in Asymmetric Y-Transistors With Internal Feedback Coupling

机译：具有内部反馈耦合的非对称Y晶体管中的sub-kT开关
- 作者：Reitzenstein Stephan;Hartmann David;Kamp Martin;Worschech Lukas
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
62.Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors

机译：用于高性能Ge / InGaAs隧道场效应晶体管的应变工程双轴拉伸外延锗
- 作者：Clavel Michael;Goley Patrick;Jain Nikhil;Zhu Yan;Hudait Mantu K.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
63.Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

机译：二维异质结层间隧穿场效应晶体管（Thin-TFET）
- 作者：Li Mingda Oscar;Esseni David;Nahas Joseph J.;Jena Debdeep;Xing Huili Grace
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Crystals;
- Current density;
- Logic gates;
- Quantum capacitance;
- Resistance;
- Tunneling;
- 2-D crystals;
- 2D crystals;
- Tunnel FET;
- benchmarking;
- layered materials;
- steep slope;
- subthreshold swing;
- subthreshold swing (SS);
- transport model;
64.Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

机译：TFET单向性和双极性对6T SRAM单元性能的影响
- 作者：Strangio Sebastiano;Palestri Pierpaolo;Esseni David;Selmi Luca;Crupi Felice;Richter Simon;Zhao Qing-Tai;Mantl Siegfried
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- CMOS integrated circuits;
- Computer architecture;
- Microprocessors;
- Performance evaluation;
- SRAM cells;
- Transistors;
- SRAM;
- TCAD;
- TFET;
- VLSI;
- technology computer aided design (TCAD);
65.Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model

机译：BSIM6 MOSFET模型中阈值电压的分析建模和实验验证
- 作者：Agarwal Harshit;Gupta Chetan;Kushwaha Pragya;Yadav Chandan;Duarte Juan P.;Khandelwal Sourabh;Hu Chenming;Chauhan Yogesh S.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Analytical models;
- Electric potential;
- Logic gates;
- MOSFET;
- Semiconductor device modeling;
- Semiconductor process modeling;
- Threshold voltage;
- BSIM6;
- MOSFET;
- SPICE;
- threshold voltage;
66.Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

机译：用于IGZO薄膜晶体管的低热预算集成的脉冲热处理
- 作者：Noh Joo Hyon;Joshi Pooran C.;Kuruganti Teja;Rack Philip D.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第3期
- Annealing;
- Furnaces;
- Plasma temperature;
- Polymers;
- Substrates;
- Temperature;
- Thin film transistors;
- Thin film transistors;
- pulse thermal annealing;
- thin film;
67.An Improved Model for the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

机译：固定光电二极管CMOS图像传感器全阱容量的改进模型
- 作者：Cao Chen;Shen Benlan;Zhang Bing;Wu Longsheng;Wang Junfeng
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
68.Ferroelectricity of HfZrO₂ in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

机译：HfZrO _{2 在具有低势陡坡晶体管表面势能的能态中的铁电}
- 作者：Lee Min Hung;Wei Y.-T.;Liu C.;Huang J.-J.;Tang Ming;Chueh Yu-Lun;Chu K.-Y.;Chen Miin-Jang;Lee Heng-Yuan;Chen Yu-Sheng;Lee Li-Heng;Tsai Ming-Jinn
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
- Ferroelectric (FE);
- ferroelectric;
- negative capacitance;
- negative capacitance (NC);
- subthreshold swing;
- subthreshold swing (SS);
69.Junctionless Biristor: A Bistable Resistor Without Chemically Doped P-N Junctions

机译：无结双电阻器：双稳态电阻，无化学掺杂PN结
- 作者：Kumar Mamidala Jagadesh;Maheedhar Maram;Varma P. Pradeep
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
- Biristor;
- SALTran effect;
- biristor;
- bistable resistor;
- current gain;
- junction-less;
70.Low Frequency Noise Characterization and Signal-to-Noise Ratio Optimization for Silicon Hall Cross Sensors

机译：硅霍尔交叉传感器的低频噪声表征和信噪比优化
- 作者：Zhang Dongli;Wang Mingxiang;Sun Kai
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
- 1/f;
- Hall;
- Noise;
- Sensors;
- Signal-to-Noise Ratio (SNR);
- noise;
- sensors;
- signal-to-noise ratio (SNR);
71.Self-Rectifying Twin-Bit RRAM in 3-D Interweaved Cross-Point Array

机译：3D交织交叉点阵列中的自整流双位RRAM
- 作者：Chen Shu-En;Chin Yung-Wen;Hsieh Min-Che;Liao Chu-Feng;Chang Tzong-Sheng;Lin Chrong-Jung;King Ya-Chin
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
72.Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

机译：4H-SiC 4°-Off（0001）p–n二极管击穿时的均匀发光，该二极管终止于不对称间隔的浮动场环
- 作者：Mochizuki Kazuhiro;Kameshiro Norifumi;Matsushima Hiroyuki;Okino Hiroyuki;Yamada Renichi
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
- Aluminum;
- ion implantation;
- power semiconductor devices;
- silicon compounds;
73.A Commercial-Simulator-Based Numerical-Analysis Methodology for 4H-SiC Power Devices Formed on Misoriented (0001) Substrates

机译：基于商业仿真器的取向不正确的（0001）基板上形成的4H-SiC功率器件的数值分析方法
- 作者：Mochizuki Kazuhiro;Okino Hiroyuki;Matsushima Hiroyuki;Yamada Renichi
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
- Aluminum;
- ion implantation;
- power semiconductor devices;
- silicon compounds;
- simulation;
74.Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs

机译：光晕注入MOSFET中的闪烁噪声的解析模型
- 作者：Agarwal Harshit;Khandelwal Sourabh;Dey Sagnik;Hu Chenming;Chauhan Yogesh Singh
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
- BSIM6;
- Compact Model;
- Flicker Noise;
- Halo Doping;
- compact model;
- flicker noise;
- halo doping;
75.Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

机译：使用AlAs / GaAs复合缓冲层在Si上异质外延Ge MOS器件
- 作者：Nguyen Peter D.;Clavel Michael Brian;Goley Patrick S.;Liu Jheng-Sin;Allen Noah P.;Guido Louis J.;Hudait Mantu K.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
76.Lamb Wave AlN Micromechanical Filters Integrated With On-chip Capacitors for RF Front-End Architectures

机译：集成有片上电容器的Lamb Wave AlN微机械滤波器，用于RF前端架构
- 作者：Liang Ji;Zhang Hongxiang;Zhang Daihua;Zhang Hao;Pang Wei
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
77.Nonlinear Theory for a Compact Radial Extended Interaction Oscillator

机译：紧凑型径向扩展互作用振荡器的非线性理论
- 作者：Lei Yanming;Yan Yang;Fu Wenjie
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
78.Silicon Carbide (SiC) Nanoelectromechanical Antifuse for Ultralow-Power One-Time-Programmable (OTP) FPGA Interconnects

机译：用于超低功耗一次性可编程（OTP）FPGA互连的碳化硅（SiC）纳米机电反熔丝
- 作者：He Tina;Zhang Fengchao;Bhunia Swarup;Feng Philip X.-L.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第4期
79.Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates

机译：具有双20nm栅极的全栅无结多晶硅纳米线晶体管的特性
- 作者：Liu Tung-Yu;Pan Fu-Ming;Sheu Jeng-Tzong
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第5期
- Gate-all-around (GAA);
- junctionless (JL);
- nanowire (NW);
- poly-Si;
- sidewall spacer;
- transistor;
80.Photovoltaic Behavior of V₂O₅/4H-SiC Schottky Diodes for Cryogenic Applications

机译：V _{2 O _{5 / 4H-SiC肖特基二极管的低温行为}}
- 作者：Di Benedetto Luigi;Landi Giovanni;Licciardo Gian Domenico;Neitzert Heinz-Christoph;Bellone Salvatore
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第5期
- 4H−SiC device;
- 4H-SiC device;
- Photodiodes;
- Photovoltaic effects;
- Schottky diodes;
- Silicon compound;
- photodiodes;
- photovoltaic effects;
- schottky diodes;
- silicon compound;
81.Best Practices for Compact Modeling in Verilog-A

机译：Verilog-A中紧凑建模的最佳实践
- 作者：McAndrew Colin C.;Coram Geoffrey J.;Gullapalli Kiran K.;Jones J. Robert;Nagel Laurence W.;Roy Ananda S.;Roychowdhury Jaijeet;Scholten Andries J.;Smit Geert D. J.;Wang Xufeng;Yoshitomi Sadayuki
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第5期
- SPICE;
- circuit simulation;
- integrated circuit modeling;
- semiconductor device modeling;
82.X-Band Compatible Flexible Microwave Inductors and Capacitors on Plastic Substrate

机译：塑料基板上兼容X波段的柔性微波电感器和电容器
- 作者：Cho Sang June;Jung Yei Hwan;Ma Zhenqiang
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第5期
- Flexible electronics;
- MIM capacitors;
- X-band;
- high self-resonance frequency;
- low temperature fabrication;
- spiral inductors;
83.Influence of the Gate Height Engineering on the Intrinsic Parameters of UDG-MOSFETs With Nonquasi Static Effect

机译：栅极高度工程对具有非准静态效应的UDG-MOSFET内部参数的影响
- 作者：Ghosh Sayani;Koley Kalyan;Saha Samar K.;K. Sarkar Chandan
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第5期
- Common Source Amplifier;
- Gate Height;
- Intrinsic Parameter;
- NQS;
- Underlap-FinFET;
- common source amplifier;
- gate height;
- intrinsic parameter;
- nonquasi-static (NQS);
84.Exploring the Design Space for Crossbar Arrays Built With Mixed-Ionic-Electronic-Conduction (MIEC) Access Devices

机译：探索使用混合离子电导（MIEC）访问设备构建的交叉开关阵列的设计空间
- 作者：Narayanan Pritish;Burr Geoffrey W.;Shenoy Rohit S.;Stephens Samantha;Virwani Kumar;Padilla Alvaro;Kurdi Bulent N.;Gopalakrishnan Kailash
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第5期
- 1AD1R;
- 1S1R;
- MIEC;
- access device;
- circuit simulation;
- crossbar memory;
- non-volatile memory;
- selector;
85.Enhanced Channel Mobility at Sub-nm EOT by Integration of a TmSiO Interfacial Layer in HfO₂/TiN High-k/Metal Gate MOSFETs

机译：通过在HfO _{2 / TiN High-k /金属栅MOSFET中集成TmSiO界面层，在亚纳米EOT下增强了沟道迁移率}
- 作者：Dentoni Litta Eugenio;Hellstrom Per-Erik;Ostling Mikael
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第5期
- CMOS;
- EOT;
- HfO2;
- RCS;
- RPS;
- Thulium;
- TmSiO;
- high-k;
- mobility;
- scattering;
- silicate;
- thulium;
86.Characterization of Quanta Image Sensor Pump-Gate Jots With Deep Sub-Electron Read Noise

机译：带有深亚电子读取噪声的Quanta图像传感器泵浦门接合点的表征
- 作者：Ma Jiaju;Starkey Dakota;Rao Arun;Odame Kofi;Fossum Eric R.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
87.On-Chip Recovery Operation for Self-Aligned Nitride Logic Non-Volatile Memory Cells in High-K Metal Gate CMOS Technology

机译：高K金属栅CMOS技术中自对准氮化物逻辑非易失性存储单元的片内恢复操作
- 作者：Lin Po-Yen;Chiu Yu-Lun;Sung Yuh-Te;Chen Jim;Chang Tzong-Sheng;King Ya-Chin;Lin Chrong Jung
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
- Charge Pumping;
- Charge pumping;
- Nonvolatile Memory;
- Reliability;
- Self -Recovery;
- nonvolatile memory;
- reliability;
- self-recovery;
88.New Findings on the Drain-Induced Barrier Lowering Characteristics for Tri-Gate Germanium-on-Insulator p-MOSFETs

机译：三栅极绝缘体上锗锗p-MOSFET的漏极诱导势垒降低特性的新发现
- 作者：Wu Shu-Hua;Yu Chang-Hung;Su Pin
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
- DIBL;
- GeOI;
- SOI;
- Tri-gate MOSFET;
- multi-gate MOSFET;
- tri-gate MOSFET;
89.High Brightness GaN-on-Si Based Blue LEDs Grown on 150 mm Si Substrates Using Thin Buffer Layer Technology

机译：使用薄缓冲层技术在150 mm Si衬底上生长的高亮度GaN-on-Si基蓝色LED
- 作者：Zhang Liyang;Tan Wei-Sin;Westwater Simon;Pujol Antoine;Pinos Andrea;Mezouari Samir;Stribley Kevin;Whiteman John;Shannon John;Strickland Keith
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
- GaN-on-Si;
- Light emitting diodes (LEDs);
- Light-emitting diodes (LEDs);
- MOCVD;
90.Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics

机译：MOSFET和隧道FET特性的载流子统计比较分析
- 作者：Li Dan;Zhang Baili;Lou Haijun;Zhang Lining;Lin Xinnan;Chan Mansun
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
- Carrier statistics;
- MOSFET;
- Numerical simulations;
- Tunneling FET;
91.On the Nature of the Memory Mechanism of Gated-Thyristor Dynamic-RAM Cells

机译：门控晶闸管动态RAM单元存储机制的性质
- 作者：Badwan Ahmad Z.;Li Qiliang;Ioannou Dimitris E.
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
- FBC;
- FED;
- FED-RAM;
- SOI;
- TCCT;
- TRAM;
92.Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing

机译：使用具有可变占空比开关偏置的多个晶体管降低低频噪声
- 作者：Jainwal Kapil;Shah Kushal;Sarkar Mukul
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
93.On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET

机译：双独立栅极FinFET中陡峭亚阈值斜率的温度依赖性
- 作者：Zhang Jian;Trommer Jens;Weber Walter Michael;Gaillardon Pierre-Emmanuel;De Micheli Giovanni
- 期刊名称：《Electron Devices Society, IEE》 | 2015年第6期
- FinFET;
- Schottky barrier;
- feedback;
- impact ionization;
- steep subthreshold slope;
94.New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

机译：包含量子效应的纳米级三栅极SOI MOSFET的新分析模型
- 期刊名称：《Electron Devices Society, IEE》 | 2014年第1期
- Device modeling;
- Poisson–Schrodinger equation;
- energy quantization;
- inversion charge;
- tri-gate MOSFET;
95.Improvement in the Light Extraction of Blue InGaN/GaN-Based LEDs Using Patterned Metal Contacts

机译：使用图案化金属触点改善蓝色InGaN / GaN基LED的光提取
- 期刊名称：《Electron Devices Society, IEE》 | 2014年第2期
96.Junctionless Silicon Nanowire Resonator

机译：无结硅纳米线谐振器
- 期刊名称：《Electron Devices Society, IEE》 | 2014年第2期
- Field effect transistor;
- NEMS;
- RF;
- nanoelectromechanical systems;
- nanowires;
- piezoresistance;
- resonant-body transistor;
- resonator;
- sensors;
- silicon-on-insulator;
97.Expansion of the J-EDS Editorial Board

机译：扩充J-EDS编辑委员会
- 作者：Jindal R.P.
- 期刊名称：《Electron Devices Society, IEE》 | 2014年第3期
98.CMOS Compatible Fabrication Processes for the Digital Micromirror Device

机译：用于数字微镜器件的CMOS兼容制造工艺
- 作者：Gong C.;Hogan T.
- 期刊名称：《Electron Devices Society, IEE》 | 2014年第3期
- DLP;
- DMD;
- Microelectromechanical devices;
- fabrication;
- spatial light modulators;
99.SiGe HBT Technology Based on a 0.13- $mu{rm m}$ Process Featuring an ${f}_{rm MAX}$ of 325 GHz

机译：SiGe HBT技术基于0.13- $ mu {rm m} $工艺，具有$ {f} _ {rm MAX} $的325 GHz
- 作者：Hashimoto T.;Tokunaga K.;Fukumoto K.;Yoshida Y.;Satoh H.;Kubo M.;Shima A.;Oda K.
- 期刊名称：《Electron Devices Society, IEE》 | 2014年第4期
- Bipolar junction transistors;
- LP-CVD;
- SiGe HBT;
- SiGe selective epitaxial growth;
- selfaligned structure;
100.Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors

机译：CMOS图像传感器中固定光电二极管电容的提取和估计
- 作者：Chao C.Y.;Chen Y.;Chou K.;Sze J.;Hsueh F.;Wuu S.
- 期刊名称：《Electron Devices Society, IEE》 | 2014年第4期
- Active pixel sensors (APS);
- CMOS image sensors (CIS);
- full well capacity (FWC);
- pinned photodiode (PPD);
- pinning voltage;

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