METHOD OF FORMING GATE RECESS, METHOD OF MANUFACTURING ALGaN/GaN-HEMT, AND ALGaN/GaN-HEMT

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a gate recess for suppressing occurrence of variation of a threshold voltage (V_th), to provide a method of manufacturing a normally-off-type AlGaN/GaN-HEMT, and to provide AlGaN/GaN-HEMT.;SOLUTION: By the method of forming the gate recess 20, UV light having energy, where a bandgap energy is equivalent to that of a prescribed semiconductor layer within the semiconductor layer, is applied from the surface of the semiconductor layer changing in a layer direction from a gate opening 19 by photoelectrochemical etching, and at the same time the semiconductor layer of prescribed bandgap energy within the semiconductor layer is etched from the gate opening of an SiN surface protection layer 17.;COPYRIGHT: (C)2011,JPO&INPIT