VERTICAL AlGaN/GaN-HEMT AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a vertical AlGaN/GaN-HEMT for performing a sure normally-off operation, and to provide a method for manufacturing the same.;SOLUTION: The vertical AlGaN/GaN-HEMT includes: an SiN surface protective film 16 including an n-GaN buffer layer 12, a UID-GaN layer 13 and a UID-AlGaN layer 14 which are successively laminated on the surface of an n⁺-GaN substrate 11 and formed on the surface of the UID-AlGaN layer; an SiN first gate insulating film 18 for covering an opening of the surface protective film; an n-GaN aperture 20 embedded in an aperture forming recess 19; an SiN second gate insulating film 21 for covering at least a surface of the aperture which opposes the n⁺-GaN substrate and the first gate insulating film; a gate electrode 22 formed on the surface of the second gate insulating film in a first gate recess; source electrodes 23 formed so as to be separated to each other on the surface of the UID-AlGaN layer with the first gate recess sandwiched; and a drain electrode 24 formed on the surface of the n⁺-GaN substrate which opposes the UID-AlGaN layer.;COPYRIGHT: (C)2012,JPO&INPIT