High-Performance AlGaN-GaN HEMT Materials and Devices Grown and Fabricated on Si Substrates

摘要

Crack-free AlGaN-GaN HEMT materials with 1.2-μm-thick were grown on high-resistivity Si(111) substrates by MOCVD. The sample showed a high 2DEG mobility, 1350cm～2/V·s at 300K and 5900cm～2/V·s at 77K, respectively. High optical and structural qualities were confirmed by PL and XRD. The dc and rf characteristics of AlGaN-GaN microwave power devices with 0.4μm gate length and lmm of the gate width were probed. The saturated drain current density was around 0.8A/mm, and the peak transconductance was beyond 230mS/mm. Tunning for a maximum output power of 5.1W, a gain of 9.1dB and a peak power-added efficiency (PAE) of 35% was obtained, respectively.