Device Quality, High Mis-Matched Semi Conductor Materials Grown on Si Substrates Using Unique Dislocation Engineering

摘要

The ARO program focused on investigating and solving tile basic materials science issues that historically have blocked the ability to achieve realistic, device quality integration of III-V materials with Si. The level of understanding that we have achieved with respect to controlling the mismatched heteroepitaxy process has enabled breakthrough results in the materials science as well as the device technology aspects of this complex and promising heterostructure system. This final report reviews the approach used in this project, some of the important results we have achieved, and the applications now made possible. We finish the report with a list of publications, list of the students developed in this program, and pathways to commercialization for the basic technology developed in this program.