The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetection

摘要

We propose and demonstrate a novel concept to address high-performance, extended short wavelength (e-SWIR) photodetectors. Our approach is based on shifting the well-developed GaAs quantum-well infrared photodetector (QWIP) technology to e-SWIR wavelengths. In order to increase the available conduction band offsets (CBOs), we suggest incorporating nitrogen (N) atoms into the quantum well material. The incorporation of N atoms into In Vs results in dilute-nitride highly mismatched alloys with lower bandgaps and higher CBOs. In our work, we demonstrate CBO values reaching up to similar to 1 eV in InGaAsN/AlGaAs QWIPs. This large CBO makes these structures suitable for e-SWIR detection. The large CBO reduces the dark current dramatically and allows efficient detection at room temperature.