Pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices

摘要

This article reports the first results on the strain-induced pseudo-Hall effect in single crystal 3C-SiC(111) four-terminal devices. The impact of crystal orientation and the direction of strain on this effect has been presented. A single crystal p-type 3C-SiC(111) was grown by low pressure chemical vapor deposition and four-terminal devices were fabricated using conventional photolithography and dry etching processes. It has been observed that the pseudo-Hall effect in p-type 3C-SiC(111) is the same in [110] and [11 (2) over bar] crystal orientations and is smaller than the pseudo-Hall effect of 3C-SiC(100) four-terminal devices due to the defects associated with the growth of 3C-SiC(111).