Growth of InAs Quantum Dots on a Low Lattice-mismatched AIGaSb Layer prepared on GaAs (001) Substrates

摘要

Optical communication wavelength emissions from the quantum dots (QDs) structures prepared on (001)-oriented GaAs substrates are discussed-A new growth technique of low-stressed InAs QDs on the AIGaSb layer in a low lattice-mismatched (1.3%) InAs/AIGaSb system is presented. The average height and diameter of the 4-ML InAs QDs on AIGaSb are evaluated to 5.8 run and 45.2 nm respectively with an average density of 2.18 * 10~(10)/cm~2 using atomic force microscope (AFM) measurements. There is structural selectivity between the QDs layer and the flat hetero-interface under changing growth conditions in the InAs/AIGaSb system. Long-wavelength PL emissions around 1.3 μm and 1.55 μm can be achieved by embedding InAs QDs in AIGaSb layers. Therefore it is expected that low-stressed InAs QDs grown on a AIGaSb layer prepared on a GaAs substrate will be useful in the fabrication of novel QDs devices for optical-communication networks.