Methodology of Built and Verification of Non-Linear EEHEMT Model for GaN HEMT Transistor

摘要

It is considered a formalized methodology allowing to realize the extraction of the parameters of non-linear EEHEMT model for ultra-high frequency FET on a basis of measured low-signal S-parameters and voltage-current characteristics. We built a model of domestic 0.15 μm GaN HEMT transistor, operating in millimeter wavelength range as an example. Correctness and accuracy of the non-linear model obtained were verified by means of measurement of the output power and load characteristics of the transistor in large-signal operation.