An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

著录项

• 来源
  《中国物理：英文版》 |2014年第8期|452-456|共5页
• 作者

  Cao Meng-Yi; Lu Yang; Wei Jia-Xing; Chen Yong-He; Li Wei-Jun; Zheng Jia-Xin; Ma Xiao-Hua;

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• 作者单位

  Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;

  Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;

  Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;

  School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
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