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Oxidation of copper pads and its influence on the quality of Au/Cu bonds during thermosonic wire bonding process

机译:热超声引线键合过程中铜焊盘的氧化及其对Au / Cu键质量的影响

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To understand the copper oxide effect on the bondability of gold wire onto a copper pad, thermosonic gold wire bonding to a copper pad was conducted at 90-200℃ under an air atmosphere. The bondability and bonding strength of the Au/Cu bonds were investigated. The bondability and bonding strength were far below the minimum requirements stated in industrial codes. At elevated bonding temperature of 200℃, the bondability and bonding strength deteriorated mainly due to hydroxide and copper oxide formation on the copper pad. Oxide formation occurred if no appropriate oxide preventive schemes were applied. At lower bonding temperature, 90℃, poor bondability and low bonding strength were mainly attributed to insufficient thermal energy for atomic inter-diffusion between the gold ball and copper pad. Copper pad oxidation was investigated using an electron spectroscopy for chemical analysis (ESCA) and thermo-gravimetric analysis (TGA). An activation energy of 35 kJ/mol for copper pad oxidation was obtained from TGA. This implies that different mechanisms govern the oxidation of copper pad and bulk copper. Hydroxide and copper oxide were identified based on the shifted binding energy. Cu(OH)_2 forms mainly on the top surface of copper pads and the underlying layer consists mainly of CuO. The hydroxide concentration increased with increasing the heating temperatures. After heating at 200℃, the hydroxide concentration on the copper pad surface was approximately six times that at 90℃. Protective measures such as passivation layer deposition or using shielding gas are critical for thermosonic wire bonding on chips with copper interconnects.
机译:为了了解氧化铜对金线在铜垫上的键合能力的影响,在空气气氛下于90-200℃进行了热超声金线与铜垫的键合。研究了Au / Cu键的键合性和键合强度。粘合性和粘合强度远低于工业规范中规定的最低要求。在升高的200℃的键合温度下,键合性和键合强度下降的主要原因是在铜焊盘上形成了氢氧化物和氧化铜。如果未采用适当的氧化物预防方案,则会形成氧化物。在较低的键合温度(90℃)下,键合性差和键合强度低主要是由于热能不足导致金球和铜垫之间的原子相互扩散。使用电子光谱法对铜垫氧化进行了化学分析(ESCA)和热重分析(TGA)。从TGA获得用于铜垫氧化的35kJ / mol的活化能。这意味着不同的机制控制着铜垫和大块铜的氧化。根据结合能的变化确定了氢氧化物和氧化铜。 Cu(OH)_2主要形成在铜焊盘的上表面,下层主要由CuO组成。氢氧化物浓度随着加热温度的升高而增加。在200℃加热后,铜垫表面的氢氧化物浓度约为90℃的六倍。诸如钝化层沉积或使用保护气体之类的保护措施对于具有铜互连的芯片上的热超声导线键合至关重要。

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