An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs

摘要

An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Two-dimen-sional Poisson equation is solved analytically using series method and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulation results, both of them turn out to agree very well. The results show the variation of channel potential and subthreshold swing with channel length, gate bias, and oxide thickness, which will provide some guidance for the integrated circuit designs.