Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET

摘要

Analytic models for channel potential and the subthreshold swing of the dual-material double-gate (DMDG) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. To avoid the complexity of the computation, Poisson's equation (PE) is solved through the entire channel region, and an analytic expression for electric potential is obtained. Based on the potential model, subthreshold swing is obtained. Model results match with Medici simulations very well. The results will provide some guidance for the application of the device in integrated circuits.