首页> 外国专利> Rectifier circuit e.g. MOSFET bridge rectifier circuit, has two transistors e.g. n-channel MOSFETs, connected with alternating voltage source connections by alternating voltage potentials, respectively

Rectifier circuit e.g. MOSFET bridge rectifier circuit, has two transistors e.g. n-channel MOSFETs, connected with alternating voltage source connections by alternating voltage potentials, respectively

机译:整流电路例如MOSFET桥式整流电路具有两个晶体管,例如n沟道MOSFET,分别通过交流电势与交流电源连接

摘要

The circuit (1a) has a direct voltage output (A5) connected with an alternating voltage source middle connection (A3). The output is connected with an alternating voltage source connection (A2) by a transistor e.g. n-channel MOSFET (NFT2). Another transistor e.g. n-channel MOSFET (NFT1), is coupled with the connection (A2), and is connected to the connection (A2) by an alternating voltage potential (V2). The former transistor is connected with an alternating voltage source connection (A1) by alternating voltage potential (V1). An independent claim is also included for a method for rectifying alternating voltage.
机译:电路(1a)具有与交流电压源中间连接(A3)连接的直流电压输出(A5)。输出通过晶体管例如晶体管与交流电压源连接(A2)连接。 n沟道MOSFET(NFT2)。另一个晶体管例如n沟道MOSFET(NFT1)与连接点(A2)耦合,并通过交流电势(V2)连接到连接点(A2)。前一个晶体管通过交流电势(V1)与交流电源连接(A1)连接。还包括用于整流交流电压的方法的独立权利要求。

著录项

  • 公开/公告号DE102007046940A1

    专利类型

  • 公开/公告日2009-04-09

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE20071046940

  • 申请日2007-09-28

  • 分类号H02M7/217;H02M3/335;

  • 国家 DE

  • 入库时间 2022-08-21 19:09:33

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