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Analytical Characterization of a Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution

机译：具有pearson-IV型掺杂分布的双材料双栅全耗尽sOI mOsFET的分析表征

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1. PEARSON-IV TYPE DOPING DISTRIBUTION-BASED ANALYTICAL MODELING OF DUAL-MATERIAL DOUBLE-GATE FULLY-DEPLETED SILICON-ON-INSULATOR MOSFET [J] . Alok Kushwaha, Manoj K. Pandey, A. K Gupta Microwave and optical technology letters . 2007,第4期

机译：基于Pearson-IV型掺杂分布的双栅双耗尽全绝缘硅MOSFET的解析模型
2. A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation [J] . Reddy G.V., Kumar M.J. IEEE transactions on nanotechnology . 2005,第2期

机译：新型双材料双栅（DMDG）纳米SOI MOSFET二维分析建模与仿真
3. AN ANALYTICAL (CLASSICAL) SUBTHRESHOLD BEHAVIOR MODEL FOR SYMMETRICAL FULLY-DEPLETED SOI DOUBLE-GATE MOSFET's [J] . Te-Kuang Chiang Journal of the Chinese Institute of Engineers. Series A . 2004,第2期

机译：对称全耗尽SOI双栅极MOSFET的解析（经典）亚阈值行为模型
4. RF-Performance of Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution [C] . Alok Kushwaha, Manoj K. Pandey, Sujata Pandey, International Workshop on the Physics of Semiconductor Devices . 2007

机译：具有Pearson-IV型掺杂分布的双材料双栅完全耗尽SOI MOSFET的RF性能
5. Characterization and modeling of the charge distribution in silicon/silicon-germanium/silicon P-channel MOSFETS. [D] . Hargrove, Michael John. 1999

机译：硅/硅锗/硅P沟道MOSFET中电荷分布的表征和建模。
6. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor [O] . Chankeun Yoon, Seungjun Moon, Changhwan Shin -1

机译：FinFET和带铁电电容器的全耗尽绝缘体上硅（FDSOI）MOSFET的磁滞窗口研究
7. Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation [O] . Houk Y., Nazarov A.N., Turchanikov V.I., 2006

机译：完全耗尽的UNIBOND SOI MOSFET受到γ辐射的电荷俘获过程的表征

Analytical Characterization of a Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution

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