Deep ultraviolet photolithography capability of ZEP520A electron beam resist for mix and match lithography

摘要

ZEP520A is a positive high resolution electron beam resist enabling nanometer scale features; however, electron beam lithography (EBL) is a characteristically slow process. It is demonstrated that ZEP520A can be exposed by deep ultraviolet (DUV) photolithography and is useful for mix and match lithography schemes. Submicron resolution was achieved, an optical pattern was successfully aligned to an EBL pattern, and 1 cm~2 was exposed in 11 min with DUV compared to 27 h with EBL.