机译:高k /金属栅UTBB-FDSOI器件建模的多尺度策略,重点是反偏压对迁移率的影响
STMicroelectronics, 850, rue J. Monnet, BP. 16. 38921 Crolles,France,IMEP-LAHC, M1NATEC, 3 Parvis Louis Neel, 38016 Grenoble,France,CEA-LETI. Campus MINATEC, 17 rue des Martyrs,38054 Grenoble, France,DIEGM, University of Udine, Via delle Scienze 208,33100 Udine, Italy;
STMicroelectronics, 850, rue J. Monnet, BP. 16. 38921 Crolles,France;
SP2M, UMR-E CEA/UJF-Grenoble 1,INAC, Grenoble, France;
STMicroelectronics, 850, rue J. Monnet, BP. 16. 38921 Crolles,France;
SP2M, UMR-E CEA/UJF-Grenoble 1,INAC, Grenoble, France;
CEA-LETI. Campus MINATEC, 17 rue des Martyrs,38054 Grenoble, France;
STMicroelectronics, 850, rue J. Monnet, BP. 16. 38921 Crolles,France;
Laboratoire Hubert Curien (UMR 5516), Institut d'Optique,18 rue Benoit Lauras, 42000, Saint-Etienne, France;
CEA-LETI. Campus MINATEC, 17 rue des Martyrs,38054 Grenoble, France;
DIEGM, University of Udine, Via delle Scienze 208,33100 Udine, Italy;
DIEGM, University of Udine, Via delle Scienze 208,33100 Udine, Italy;
SP2M, UMR-E CEA/UJF-Grenoble 1,INAC, Grenoble, France;
Synopsys, Inc., 700 E. Middlefield Rd., Mountain View, CA, USA;
Synopsys, Thurgauerstrasse 40, 8050 Zurich, Switzerland;
Synopsys, Thurgauerstrasse 40, 8050 Zurich, Switzerland;
STMicroelectronics, 850, rue J. Monnet, BP. 16. 38921 Crolles,France;
STMicroelectronics, 850, rue J. Monnet, BP. 16. 38921 Crolles,France;
DIEGM, University of Udine, Via delle Scienze 208,33100 Udine, Italy;
UTBB-FDSOI devices; Split C-V mobility measurements; Back bias; NEGF; Multi-scale simulations; TCAD;
机译:NBTI / PBTI对纳米CMOS中具有高k金属栅极器件的多米诺逻辑电路性能的影响
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机译:高k金属栅极UTBB-FDSOI器件中的有效场和通用迁移率
机译:建模对人类移动性的影响:作为传感器和内容向量的移动设备。
机译:病毒复制动力学和抗病毒治疗策略的数学分析:从基本模型到基于年龄的多尺度建模
机译:高k /金属栅UTBB-FDSOI器件建模的多尺度策略,重点是反偏压对迁移率的影响