Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices

摘要

This paper aims at reviewing experimental and theoretical behaviors of universal mobility in high-k metal gate UTBB-FDSOI devices. Based on split-CV mobility measurements, the parameter η characterizing the effective field, has been extracted for a large range of back voltages and temperatures in devices with various equivalent oxide thicknesses. We demonstrated that a nearly universal trend for the mobility with respect to the effective field can be obtained in the front inversion regime but is difficult to obtain in the back channel inversion regime.