Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs

摘要

This paper investigates the impact of ionizing radiation on floating body effects for the 130 nm PDSOI NMOSFETs. It is shown that the floating body effects are restrained by the irradiation both for the core device and the input/output (I/O) device. For the core device, the second peak of the front gate transconductance which is known as the gate-induced floating body effect degrades with the incremental total dose. The decline of the second peak is ascribed to the impact of the radiation-induced leakage current, but not to the radiation-induced interface traps assisted recombination or the suppression of the electron valence band (EVB) tunneling. For the I/O device, the kink effect and the hysteresis effect in the output characteristic which are observed before irradiation become insignificant after irradiation. These phenomena are due to the fully depleted of the silicon film in the I/O device which is caused by the buried oxide charge trapping. In addition, a radiation-induced latch, which is result from the leakage current-induced impact ionization, is also observed in the I/O device.