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Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect
Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect
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机译:在总电离剂量效应下16 nm MLC NAND闪存的错误表征和缓解
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摘要
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
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