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机译:130-NM PdSOI I / O NMOSFET中总电离剂量对体电流影响的分析研究
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China|Sci & Technol Reliabil Phys & Applicat Technol El Guangzhou 510610 Guangdong Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China|Sci & Technol Reliabil Phys & Applicat Technol El Guangzhou 510610 Guangdong Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China|Sci & Technol Reliabil Phys & Applicat Technol El Guangzhou 510610 Guangdong Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China|Sci & Technol Reliabil Phys & Applicat Technol El Guangzhou 510610 Guangdong Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China|Sci & Technol Reliabil Phys & Applicat Technol El Guangzhou 510610 Guangdong Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Body current; coupling effect; hot carrier degradation; impact ionization; partially depleted (PD); silicon-on-insulator (SOI); total ionizing dose (TID); trapped charge;
机译:130nm PDSOI I / O nMOSFET中总电离剂量对体电流影响的分析研究
机译:130nm PDSOI输入/输出NMOSFET中总电离剂量引起的单晶体管锁存
机译:130nm PDSOI I / O NMOSFET中总电离剂量引起的体电流降低
机译:0.18 UM窄通道I / O nMOSFETS的总电离剂量响应
机译:总电离剂量和剂量率对(正负)BJT带隙基准的影响
机译:全身电离辐射对肌肉干细胞的时间和剂量依赖性
机译:在130nm T型栅极PDSOI I / O NMOSFET中的总电离剂量诱导的身体屏蔽效果