Total Ionizing Dose and random dopant fluctuation effects in 65-nm gate length partially depleted Silicon-on-Insulator nMOSFETs

摘要

The contribution of random dopant fluctuations in the post-irradiation response of deep sub-micron Silicon-Insulator MOSFETs is examined with the use of TCAD simulation tools. The variation in the off-state leakage current is quantified for different Total Ionizing Dose charge concentrations in the buried oxide and shallow trench isolation. The results show that depending on the charge in the oxide and the doping densities employed, doping fluctuations can play a significant role in the post-irradiation characteristics of the device.