Novel Layout Technique for Single-Event Transient Mitigation Using Dummy Transistor

摘要

In this paper, a novel layout technique for single-event transient (SET) mitigation based on dummy transistors is proposed. Numerical simulations using technology computer-aided design with 90-nm twin-well CMOS technology show that the proposed layout technique can efficiently reduce SET pulsewidths. This layout design methodology is thoroughly discussed for the case of the inverter cell, and the discussion is then extended to other logic cells. We also compare the proposed layout technique with the “guard ring” (for P-hit mitigation) and the “guard drain” (for N-hit mitigation) layout techniques, and we find that not only does the proposed layout technique provide the benefit of greater SET mitigation but it also presents a smaller area penalty.