An analytical model for pinchoff voltage evaluation of ion-implanted GaAs MESFETs

摘要

The authors describe an analytical model for accurate evaluation of pinchoff voltage and channel thickness of ion-implanted GaAs MESFETs (metal-semiconductor field-effect transistors). A method for calculating I-V characteristics is outlined that uses pinchoff voltage and channel thickness and takes into account the effects of capping, backgating and source and drain resistances. Both single- and multiple-implantation cases are discussed.