Threshold voltage model for ion-implanted short gate-length GaAs MESFETs under dark and illuminated conditions

摘要

In the present work, an attempt has been made to analytically model the threshold voltage of short-channel optically controlled GaAs MESFETs with a vertical Gaussian profile. The two-dimensional (2D) Poisson''s equation has been solved with suitable boundary conditions using superposition method to obtain an optical radiation dependent threshold voltage expression. The credibility of the model is established by comparison of the calculated threshold voltage with the numerical simulation data obtained by ATLAS™ device simulator.